MSCSM170HRM233AG
Microchip Technology
Deutsch
Artikelnummer: | MSCSM170HRM233AG |
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Hersteller / Marke: | Micrel / Microchip Technology |
Teil der Beschreibung.: | PM-MOSFET-SIC-SP3F |
Datenblätte: | None |
RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $257.32 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 3.2V @ 5mA, 2.8V @ 3mA |
Technologie | Silicon Carbide (SiC) |
Supplier Device-Gehäuse | - |
Serie | - |
Rds On (Max) @ Id, Vgs | 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V |
Leistung - max | 602W (Tc), 395W (Tc) |
Verpackung / Gehäuse | Module |
Paket | Bulk |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | -40°C ~ 175°C (TJ) |
Befestigungsart | Chassis Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 6600pF @ 1000V, 3020pF @ 1000V |
Gate Charge (Qg) (Max) @ Vgs | 356nC @ 20V, 232nC @ 20V |
FET-Merkmal | Silicon Carbide (SiC) |
Drain-Source-Spannung (Vdss) | 1700V (1.7kV), 1200V (1.2kV) |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 124A (Tc), 89A (Tc) |
Konfiguration | 4 N-Channel (Three Level Inverter) |
PM-MOSFET-SIC-SBD-SP6P
PM-MOSFET-SIC-SBD-SP6C
PM-MOSFET-SIC-SP6C
PM-MOSFET-SIC-SP3F
PM-MOSFET-SIC-SBD~-SP6C
PM-MOSFET-SIC-SBD-SP3F
PM-MOSFET-SIC-SP6C
PM-MOSFET-SIC-SP3F
PM-MOSFET-SIC-SBD-SP6P
PM-MOSFET-SIC-SP6C
PM-MOSFET-SIC-SBD-SP6C
PM-MOSFET-SIC-SBD-SP3F
PM-MOSFET-SIC-SBD-SP6C
PM-MOSFET-SIC-SBD-SP3F
PM-MOSFET-SIC-SP1F
PM-MOSFET-SIC-SBD~-D3
PM-MOSFET-SIC-SP3F
PM-MOSFET-SIC-SBD-SP3F
PM-MOSFET-SIC-SBD-SP3F
PM-MOSFET-SIC-SBD-SP6C
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() MSCSM170HRM233AGMicrochip Technology |
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